Atomically Thin Antimony‐Doped Indium Oxide Nanosheets for Optoelectronics

Wide bandgap semiconducting oxides are emerging as potential 2D materials for transparent electronics and optoelectronics. This fuels the quest discovering new metal with ultrahigh transparency high mobility. While former can be achieved by reducing thickness of oxide films to only a few nanometers, latter is more commonly realized intentional doping. article reports one-step synthesis few-unit-cell-thick laterally large antimony-doped indium (IAO). The doping process occurs spontaneously when grown on surface molten Sb–In alloy IAO nanosheets easily printed onto desired substrates. With thicknesses at atomic scale, these exhibit excellent exceeding 98% across visible near-infrared range. Field-effect transistors based low-doped reveal electron mobility ≈40 cm2 V−1 s−1. Additionally, notable photoresponse observed in IAO-based photodetectors under ultraviolet (UV) radiation. Photoresponsivities highly doped wavelength 285 nm found 1.2 × 103 0.7 A W−1, respectively, identifying promising candidates fabrication high-performance optoelectronics UV region.